IPI65R600C6XKSA1N-Channel 650 V 7.3A (Tc) 63W (Tc) Through Hole PG-TO262-3
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ABRmicro #.ABR2045-IPI65R-969079
ManufacturerInfineon Technologies
MPN #.IPI65R600C6XKSA1
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Datasheet
IPx65R600C6(PDF)
IPx65R600C6(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPI65R
Continuous Drain Current (ID) @ 25°C7.3A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)23 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)440 pF @ 100 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation63W (Tc)
RDS(on) Drain-to-Source On Resistance600mOhm @ 2.1A, 10V
Package Type (Mfr.)PG-TO262-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 210µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPI65R600C6XKSA1 by Infineon Technologies is an N-channel MOSFET designed for robust performance with a voltage rating of 650 V and current capability of 7.3A at Tc. Encased in a PG-TO262-3 through-hole package, it has a power dissipation capacity of 63W at Tc. Key electrical properties include a gate threshold voltage of 3.5V at 210µA and a gate-to-source voltage tolerance of ±20V, making it suitable for handling significant power levels efficiently.
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