IPI65R110CFDXKSA1N-Channel 650 V 31.2A (Tc) 277.8W (Tc) Through Hole PG-TO262-3
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ABRmicro #.ABR2045-IPI65R-1015050
ManufacturerInfineon Technologies
MPN #.IPI65R110CFDXKSA1
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Datasheet
IPx65R110CFD(PDF)
IPx65R110CFD(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPI65R
Continuous Drain Current (ID) @ 25°C31.2A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)118 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3240 pF @ 100 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation277.8W (Tc)
RDS(on) Drain-to-Source On Resistance110mOhm @ 12.7A, 10V
Package Type (Mfr.)PG-TO262-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 1.3mA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPI65R110CFDXKSA1 is an N-Channel MOSFET manufactured by Infineon Technologies, designed for high-voltage applications with a drain-to-source voltage rating of 650 volts. It can handle a continuous current of 31.2A at the case (Tc) and dissipates up to 277.8W under specific conditions. The component comes in a PG-TO262-3 through-hole package, offering ease of installation in circuit assemblies. It features a gate threshold voltage of 4.5V operating at 1.3mA, and exhibits an on-resistance of 110 milliohms at a current of 12.7A with a gate-source voltage of 10V. Such specifications make it a robust choice for handling significant power levels efficiently.
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