IPI60R165CPXKSA1N-Channel 600 V 21A (Tc) 192W (Tc) Through Hole PG-TO262-3-1
1:$4.2140
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IPI60R-938806
ManufacturerInfineon Technologies
MPN #.IPI60R165CPXKSA1
Estimated Lead Time15 Weeks
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Datasheet
IPI60R165CP(PDF)
IPI60R165CP(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 4.2140
Ext. Price$ 4.2140
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$4.2140$4.2140
10$3.5400$35.4030
100$2.8630$286.3440
500$2.5460$1272.8750
1000$2.1790$2179.1880
2000$2.0520$4103.3750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS®
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIPI60R165
Continuous Drain Current (ID) @ 25°C21A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)52 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2000 pF @ 100 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation192W (Tc)
RDS(on) Drain-to-Source On Resistance165mOhm @ 12A, 10V
Package Type (Mfr.)PG-TO262-3-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 790µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Datasheets
Environmental Information
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPI60R165CPXKSA1 is a discrete semiconductor component manufactured by Infineon Technologies, featuring an N-Channel MOSFET with a maximum voltage rating of 600V and a continuous current capacity of 21A at a case temperature (Tc). It is capable of handling a power dissipation of up to 192W at Tc. This component, housed in a PG-TO262-3-1 through-hole package, exhibits an on-state resistance of 165 milliohms when subjected to a gate-source voltage of 10V and a drain current of 12A. It is designed to deliver efficient performance in high-voltage applications requiring robust and reliable switching.
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