IPI35CN10N GN-Channel 100 V 27A (Tc) 58W (Tc) Through Hole PG-TO262-3
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ABRmicro #.ABR2045-IPI35C-1016207
ManufacturerInfineon Technologies
MPN #.IPI35CN10N G
Estimated Lead Time-
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Datasheet
IPx33-35CN10N G(PDF)
IPx33-35CN10N G(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPI35C
Continuous Drain Current (ID) @ 25°C27A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)24 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1570 pF @ 50 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation58W (Tc)
RDS(on) Drain-to-Source On Resistance35mOhm @ 27A, 10V
Package Type (Mfr.)PG-TO262-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 29µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPI35CN10N G is an N-Channel MOSFET manufactured by Infineon Technologies, designed for efficient power management. It can handle a maximum voltage of 100 V and a current of 27A at the case temperature. With a power dissipation capacity up to 58W, this component is housed in a PG-TO262-3 package, making it suitable for through-hole assembly. It features a gate-source voltage of ±20V and exhibits a low on-state resistance of 35 milliohms when conducting 27A at 10V, ensuring minimal power loss during operation. Additionally, it possesses an input capacitance of 1570 pF at 50 V, which influences its switching performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.