IPI120P04P4L03AKSA1P-Channel 40 V 120A (Tc) 136W (Tc) Through Hole PG-TO262-3-1
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ABRmicro #.ABR2045-IPI120-1024613
ManufacturerInfineon Technologies
MPN #.IPI120P04P4L03AKSA1
Estimated Lead Time-
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Datasheet
IPx120P04P4L-03(PDF)
IPx120P04P4L-03(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPI120P
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)234 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)15000 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation136W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance3.4mOhm @ 100A, 10V
Package Type (Mfr.)PG-TO262-3-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 340µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPI120P04P4L03AKSA1 is a P-channel MOSFET manufactured by Infineon Technologies, featuring a voltage rating of 40V and a current capacity of 120A at case temperature. It is designed with a maximum power dissipation of 136W under specified conditions and comes in a PG-TO262-3-1 through-hole package. The part exhibits a gate charge of 234 nanocoulombs at 10V and a low on-state resistance of 3.4 milliohms at 100A and 10V. It can handle gate-source voltage variations up to ±16V, making it suitable for efficient current control in various applications.
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