IPI120N10S403AKSA1N-Channel 100 V 120A (Tc) 250W (Tc) Through Hole PG-TO262-3-1
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ABRmicro #.ABR2045-IPI120-928237
ManufacturerInfineon Technologies
MPN #.IPI120N10S403AKSA1
Estimated Lead Time-
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Datasheet
IPx120N10S4-03(PDF)
IPx120N10S4-03(PDF)
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Min.&Mult.1
Packaging
Tube
Shipping DateNovember 15, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPI120N
Continuous Drain Current (ID) @ 25°C120A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)140 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)10120 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation250W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance3.9mOhm @ 100A, 10V
Package Type (Mfr.)PG-TO262-3-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 180µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Datasheets
PCN Obsolescence/ EOL
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPI120N10S403AKSA1 is an N-channel MOSFET manufactured by Infineon Technologies. It is designed to handle a voltage of up to 100 V and a continuous current of 120 A under specific conditions (Tc). The part is capable of dissipating 250 W of power, also rated at Tc, and comes in a PG-TO262-3-1 through-hole package. This MOSFET exhibits a capacitance of 10,120 pF at 25 V and a total gate charge of 140 nC at 10 V. Additionally, it has a gate threshold voltage of 3.5V at a test current of 180µA.
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