IPI100N06S3L04XKN-Channel 55 V 100A (Tc) 214W (Tc) Through Hole PG-TO262-3
1:$1.0940
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ABRmicro #.ABR2045-IPI100-1023113
ManufacturerInfineon Technologies
MPN #.IPI100N06S3L04XK
Estimated Lead Time-
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Datasheet
IPB/IPI/IPP100N06S3L-04(PDF)
IPB/IPI/IPP100N06S3L-04(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 1.0940
Ext. Price$ 1.0940
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.0940$1.0940
50$0.8330$41.6500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPI100N
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)362 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)17270 pF @ 25 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation214W (Tc)
RDS(on) Drain-to-Source On Resistance3.8mOhm @ 80A, 10V
Package Type (Mfr.)PG-TO262-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 150µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPI100N06S3L04XK is a semiconductor device manufactured by Infineon Technologies, specifically an N-channel MOSFET. It is designed to handle a voltage of 55V and a continuous current of 100A under optimal thermal conditions, dissipating up to 214W of power. The transistor is housed in a PG-TO262-3 through-hole package, providing stability and ease of installation in circuit boards. Notably, the device features a low on-resistance of 3.8 milliohms when conducting 80A at a gate voltage of 10V, indicating efficient performance in high-current applications. It supports gate-source voltages of both 5V and 10V and can handle gate-source voltage spikes up to ±16V, enhancing its reliability in various electrical environments.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.