IPI086N10N3GXKSA1N-Channel 100 V 80A (Tc) 125W (Tc) Through Hole PG-TO262-3
1:$1.4110
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ABRmicro #.ABR2045-IPI086-956410
ManufacturerInfineon Technologies
MPN #.IPI086N10N3GXKSA1
Estimated Lead Time18 Weeks
SampleGet Free Sample
Datasheet
IPx08xN10N3 G(PDF)
IPx08xN10N3 G(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tube
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.4110
Ext. Price$ 1.4110
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.4110$1.4110
50$1.1340$56.6840
100$0.9330$93.2880
500$0.7890$394.7190
1000$0.6690$669.3750
2000$0.6350$1270.7500
5000$0.6130$3065.3130
10000$0.5920$5918.1250
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tube
Lifecycle StatusActive
Base Product NumberIPI086
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)55 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3980 pF @ 50 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation125W (Tc)
RDS(on) Drain-to-Source On Resistance8.6mOhm @ 73A, 10V
Package Type (Mfr.)PG-TO262-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 75µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Datasheets
Environmental Information
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The part IPI086N10N3GXKSA1, manufactured by Infineon Technologies, is a robust N-Channel MOSFET featuring a maximum drain-source voltage of 100 volts and a continuous drain current of 80 amps when properly cooled (at Tc). It is designed for through-hole mounting in a PG-TO262-3 package, capable of dissipating up to 125 watts. The device exhibits a gate threshold voltage of 3.5 volts at a gate current of 75 microamperes and has an input capacitance of 3980 picofarads at 50 volts. This MOSFET ensures efficient switching with a gate drive voltage requirement specified at 6 volts and 10 volts.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.