IPI030N10N3GHKSA1N-Channel 100 V 100A (Tc) 300W (Tc) Through Hole PG-TO262-3
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ABRmicro #.ABR2045-IPI030-993584
ManufacturerInfineon Technologies
MPN #.IPI030N10N3GHKSA1
Estimated Lead Time-
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Datasheet
IPP,IPI030N10N3 G(PDF)
IPP,IPI030N10N3 G(PDF)
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Packaging
Tube
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tube
Lifecycle StatusObsolete
Base Product NumberIPI030N
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)206 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)14800 pF @ 50 V
MfrInfineon Technologies
Mounting StyleThrough Hole
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance3mOhm @ 100A, 10V
Package Type (Mfr.)PG-TO262-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 275µA
Package / CaseTO-262-3 Long Leads, I2PAK, TO-262AA
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The Infineon Technologies IPI030N10N3GHKSA1 is an N-Channel MOSFET designed for high power and efficiency applications. This component is rated for a maximum voltage of 100V and can handle a continuous current of up to 100A, with a power dissipation capacity of 300W when mounted on an appropriate heatsink. Packaged in a PG-TO262-3 through-hole format, it features a low on-state resistance of 3 milliohms at 100A and 10V, making it suitable for minimizing conduction losses. Additionally, it exhibits a total gate charge of 206 nC at 10V, reflecting its capability for fast switching.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.