IPF06N03LA GN-Channel 25 V 50A (Tc) 83W (Tc) Surface Mount PG-TO252-3-23
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ABRmicro #.ABR2045-IPF06N-1022624
ManufacturerInfineon Technologies
MPN #.IPF06N03LA G
Estimated Lead Time-
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Datasheet
IP(D,F,S,U)06N03LA G(PDF)
IP(D,F,S,U)06N03LA G(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberIPF06N
Continuous Drain Current (ID) @ 25°C50A (Tc)
Drain-to-Source Voltage (VDS)25 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)22 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2653 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation83W (Tc)
RDS(on) Drain-to-Source On Resistance5.7mOhm @ 30A, 10V
Package Type (Mfr.)PG-TO252-3-23
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 40µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental & Export Classifications
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPF06N03LA G is a surface-mount MOSFET manufactured by Infineon Technologies, featuring an N-Channel configuration. It is designed to handle a maximum voltage of 25V and a continuous current of 50A when properly cooled. With a power dissipation rating of 83W under specified conditions, this MOSFET is housed in a PG-TO252-3-23 package. It demonstrates a gate threshold voltage of 2V at a gate current of 40µA and offers a maximum gate-to-source voltage of ±20V, making it suitable for a variety of electronic switching applications where space-saving and efficiency are important.
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