IPDD60R102G7XTMA1N-Channel 600 V 23A (Tc) 139W (Tc) Surface Mount PG-HDSOP-10-1
1:$4.2230
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ABRmicro #.ABR2045-IPDD60-979106
ManufacturerInfineon Technologies
MPN #.IPDD60R102G7XTMA1
Estimated Lead Time17 Weeks
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Datasheet
IPDD60R102G7(PDF)
IPDD60R102G7(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 4.2230
Ext. Price$ 4.2230
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$4.2230$4.2230
10$3.5430$35.4340
100$2.8670$286.6630
500$2.5490$1274.4690
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ G7
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIPDD60
Continuous Drain Current (ID) @ 25°C23A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)34 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1320 pF @ 400 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation139W (Tc)
RDS(on) Drain-to-Source On Resistance102mOhm @ 7.8A, 10V
Package Type (Mfr.)PG-HDSOP-10-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 390µA
Package / Case10-PowerSOP Module
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Datasheets
Environmental Information
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPDD60R102G7XTMA1 is a high-performance N-Channel MOSFET manufactured by Infineon Technologies. It is designed for efficient power management and is capable of withstanding up to 600 V and delivering 23A of current in suitable conditions. Housed in a compact PG-HDSOP-10-1 surface mount package, it supports a maximum power dissipation of 139W. The MOSFET has a gate threshold voltage of 4V at 390µA and a total gate charge of 34 nC at 10V, making it suitable for a variety of high-voltage applications where efficient operation is essential.
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