IPDD60R080G7XTMA1N-Channel 600 V 29A (Tc) 174W (Tc) Surface Mount PG-HDSOP-10-1
1:$5.5220
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ABRmicro #.ABR2045-IPDD60-1030136
ManufacturerInfineon Technologies
MPN #.IPDD60R080G7XTMA1
Estimated Lead Time17 Weeks
SampleGet Free Sample
Datasheet
IPDD60R080G7(PDF)
IPDD60R080G7(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 5.5220
Ext. Price$ 5.5220
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$5.5220$5.5220
10$4.6370$46.3680
100$3.7520$375.1690
500$3.3350$1667.5940
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ G7
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIPDD60
Continuous Drain Current (ID) @ 25°C29A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)42 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1640 pF @ 400 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation174W (Tc)
RDS(on) Drain-to-Source On Resistance80mOhm @ 9.7A, 10V
Package Type (Mfr.)PG-HDSOP-10-1
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 490µA
Package / Case10-PowerSOP Module
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Datasheets
Environmental Information
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPDD60R080G7XTMA1 is a power transistor from Infineon Technologies designed with an N-channel configuration. It operates at a voltage of 600 V and has a current capacity of 29A when applied to the case (Tc), with a power dissipation of 174W under similar conditions. The package type is a surface mount PG-HDSOP-10-1, which facilitates compact and efficient designs. It features a threshold voltage of 10V and a capacitance of 1640 pF at 400 V, handling voltages of up to ±20V. This transistor is suitable for high-efficiency power switching applications that require robust and reliable performance.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.