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IPD90N06S4L05ATMA2N-Channel 60 V 90A (Tc) 107W (Tc) Surface Mount PG-TO252-3-11

1:$1.3260

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ABRmicro #.ABR2045-IPD90N-945737
MPN #.IPD90N06S4L05ATMA2
Estimated Lead Time12 Weeks
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In Stock: 1690
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.3260
Ext. Price$ 1.3260
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.3260$1.3260
10$1.1020$11.0180
100$0.8770$87.6560
500$0.7420$370.8130
1000$0.6290$629.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIPD90
Continuous Drain Current (ID) @ 25°C90A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)110 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)8180 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation107W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance4.6mOhm @ 90A, 10V
Package Type (Mfr.)PG-TO252-3-11
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 60µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPD90N06S4L05ATMA2 is an N-Channel MOSFET from Infineon Technologies, designed for versatile use in electrical circuits. It is capable of handling a maximum voltage of 60V and a continuous current of 90A at a case temperature (Tc), delivering a maximum power dissipation of 107W. This surface-mount device comes in a PG-TO252-3-11 package and features a low on-resistance of 4.6mOhm at 90A with a gate-source voltage of 10V, making it efficient for power switching applications. Additionally, it can tolerate gate-source voltages up to ±16V, with a gate threshold voltage starting at 2.2V at a drain current of 60µA.
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