IPD90N06S407ATMA2N-Channel 60 V 90A (Tc) 79W (Tc) Surface Mount PG-TO252-3-11
1:$1.1880
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IPD90N-960992
ManufacturerInfineon Technologies
MPN #.IPD90N06S407ATMA2
Estimated Lead Time12 Weeks
SampleGet Free Sample
Datasheet
IPD90N06S4-07(PDF)
IPD90N06S4-07(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.1880
Ext. Price$ 1.1880
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.1880$1.1880
10$0.9710$9.7110
100$0.7540$75.4380
500$0.6410$320.3440
1000$0.5220$521.6880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIPD90
Continuous Drain Current (ID) @ 25°C90A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)56 nC @ 10 V
GradeAutomotive
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation79W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance6.9mOhm @ 90A, 10V
Package Type (Mfr.)PG-TO252-3-11
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 40µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental Information
PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPD90N06S407ATMA2 is a surface mount MOSFET manufactured by Infineon Technologies. It is an N-Channel MOSFET that can handle a maximum drain-source voltage of 60 volts and a continuous drain current of 90 amps at a case temperature rating. The device offers a power dissipation of 79 watts, which contributes to its ability to manage high power loads in compact spaces. It operates efficiently with a gate-source voltage rating of up to ±20 volts and has a threshold voltage of 4 volts at 40 microamps. The MOSFET is housed in a PG-TO252-3-11 package, making it suitable for SMD applications where space is at a premium.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.