IPD85P04P407ATMA1P-Channel 40 V 85A (Tc) 88W (Tc) Surface Mount PG-TO252-3-313
1:$1.5130
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ABRmicro #.ABR2045-IPD85P-1003313
ManufacturerInfineon Technologies
MPN #.IPD85P04P407ATMA1
Estimated Lead Time-
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Datasheet
IPD85P04P4-07(PDF)
IPD85P04P4-07(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.5130
Ext. Price$ 1.5130
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Price Gradients
Qty.Unit PriceExt. Price
1$1.5130$1.5130
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusEnd of Life (EOL)
Base Product NumberIPD85P04
Continuous Drain Current (ID) @ 25°C85A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)89 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6085 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation88W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance7.3mOhm @ 85A, 10V
Package Type (Mfr.)PG-TO252-3-313
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 150µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPD85P04P407ATMA1 is a P-Channel MOSFET manufactured by Infineon Technologies, suitable for automotive applications. It features a voltage rating of 40V and can handle a continuous current of 85A at case temperature (Tc). With a power dissipation capacity of 88W, this component is designed for surface mounting, packaged in a PG-TO252-3-313 form factor. The device also exhibits a total gate charge of 6085 picofarads at 25V and operates efficiently at a drive voltage of 10V.
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