IPD80R2K8CEBTMA1N-Channel 800 V 1.9A (Tc) 42W (Tc) Surface Mount PG-TO252-3-11
N/A
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IPD80R-942127
ManufacturerInfineon Technologies
MPN #.IPD80R2K8CEBTMA1
Estimated Lead Time-
SampleGet Free Sample
Datasheet
IPx80R2K8CE(PDF)
IPx80R2K8CE(PDF)
For large-volume purchases, our unique channels enable us to provide prices that other suppliers cannot match: significantly below market rates.
Service
Guaranteed AuthenticityTechnical SupportFast RefundFree Shipping (over $960)Issue an Invoice24/7 Manual Service In Stock: 18
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Send Inquiry
Add To RFQ List
Related Parts
FS3L40R07W2H5FB11BOMA1$77.5420
IGBT Module Trench Field Stop Three Phase Inverter 650 V 40 A 20 mW Chassis Mount AG-EASY2B-2
IMW65R072M1HXKSA1$8.2660
N-Channel 650 V 26A (Tc) 96W (Tc) Through Hole PG-TO247-3-41
IMZA65R027M1HXKSA1$15.4470
N-Channel 650 V 59A (Tc) 189W (Tc) Through Hole PG-TO247-4-3
IPAN60R125PFD7SXKSA1$2.2480
N-Channel 650 V 25A (Tc) 32W (Tc) Through Hole PG-TO220-FPIPD60R1K5PFD7SAUMA1$0.6420
N-Channel 600 V 3.6A (Tc) 22W (Tc) Surface Mount PG-TO252-3-344
IPS60R1K0PFD7SAKMA1$0.3040
N-Channel 650 V 4.7A (Tc) 26W (Tc) Through Hole PG-TO251-3
IPS60R210PFD7SAKMA1$0.6960
N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolescence Review In Progress
Base Product NumberIPD80R
Continuous Drain Current (ID) @ 25°C1.9A (Tc)
Drain-to-Source Voltage (VDS)800 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)12 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)290 pF @ 100 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation42W (Tc)
RDS(on) Drain-to-Source On Resistance2.8Ohm @ 1.1A, 10V
Package Type (Mfr.)PG-TO252-3-11
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.9V @ 120µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desire
info@Abrmicro.com
info@Abrmicro.comExtended Links
Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPD80R2K8CEBTMA1 is an N-channel MOSFET manufactured by Infineon Technologies, designed for power switching applications. It operates at a voltage rating of 800 V and supports a continuous drain current of 1.9A at a specified case temperature. This component can handle power dissipation of up to 42W. With an on-resistance of 2.8 Ohms when measured at 1.1A and 10V, the MOSFET features a gate charge capacitance of 290 pF at 100 V. It is housed in a surface-mount PG-TO252-3-11 package, facilitating integration into various electronic designs where compact and reliable power control is essential.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.