IPD80N06S3-09N-Channel 55 V 80A (Tc) 107W (Tc) Surface Mount PG-TO252-3-11
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ABRmicro #.ABR2045-IPD80N-1014400
ManufacturerInfineon Technologies
MPN #.IPD80N06S3-09
Estimated Lead Time-
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Datasheet
IPD80N06S3-09(PDF)
IPD80N06S3-09(PDF)
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Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberIPD80N
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)88 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)6100 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation107W (Tc)
RDS(on) Drain-to-Source On Resistance8.4mOhm @ 40A, 10V
Package Type (Mfr.)PG-TO252-3-11
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 55µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPD80N06S3-09 is an N-Channel MOSFET manufactured by Infineon Technologies. It is designed for surface mount applications with a PG-TO252-3-11 package. This MOSFET can handle a maximum continuous drain current of 80A and has a drain-source voltage rating of 55V. The device is capable of dissipating up to 107W of power under standard conditions. It features a gate charge of 88 nC at 10V and a threshold voltage of 4V with a drain current of 55µA. This makes it suitable for high current and voltage applications that require efficient power management.
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