IPD70R2K0CEAUMA1N-Channel 700 V 4A (Tc) 42W (Tc) Surface Mount PG-TO252-3
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ABRmicro #.ABR2045-IPD70R-982074
ManufacturerInfineon Technologies
MPN #.IPD70R2K0CEAUMA1
Estimated Lead Time-
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Datasheet
IPD70R2K0CE(PDF)
IPD70R2K0CE(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ CE
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberIPD70
Continuous Drain Current (ID) @ 25°C4A (Tc)
Drain-to-Source Voltage (VDS)700 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)7.8 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)163 pF @ 100 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation42W (Tc)
RDS(on) Drain-to-Source On Resistance2Ohm @ 1A, 10V
Package Type (Mfr.)PG-TO252-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 70µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPD70R2K0CEAUMA1 is an N-Channel MOSFET manufactured by Infineon Technologies, designed for high voltage applications with a breakdown voltage rating of 700 V. It can handle a continuous current of 4A at the maximum case temperature, and dissipates up to 42W at the same temperature. Encased in a compact PG-TO252-3 surface mount package, this MOSFET features a low gate charge of 7.8 nC at 10 V, enabling efficient switching performance. Its input capacitance is rated at 163 pF when subjected to 100 V, and it requires a threshold voltage of 3.5V at a gate leakage current of 70µA for operation.
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