IPD70N12S3L12ATMA1N-Channel 120 V 70A (Tc) 125W (Tc) Surface Mount PG-TO252-3-11
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ABRmicro #.ABR2045-IPD70N-960868
ManufacturerInfineon Technologies
MPN #.IPD70N12S3L12ATMA1
Estimated Lead Time-
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Datasheet
IPD70N12S3L-12(PDF)
IPD70N12S3L-12(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberIPD70
Continuous Drain Current (ID) @ 25°C70A (Tc)
Drain-to-Source Voltage (VDS)120 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)77 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5550 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation125W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance11.5mOhm @ 70A, 10V
Package Type (Mfr.)PG-TO252-3-11
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.4V @ 83µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPD70N12S3L12ATMA1 is an N-Channel MOSFET manufactured by Infineon Technologies. It is designed to handle a maximum drain-source voltage of 120 V and a continuous drain current of 70 A at a case temperature (Tc). The device can dissipate up to 125 W under the same conditions. It is housed in a compact PG-TO252-3-11 surface-mount package, making it suitable for applications where space is limited. The MOSFET has a gate threshold voltage of 4.5V to 10V and can withstand gate-to-source voltages of up to ±20V. Additionally, it features a gate charge of 77 nC at 10 V, contributing to efficient switching performance.
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