IPD65R950CFDATMA2N-Channel 650 V 3.9A (Tc) 36.7W (Tc) Surface Mount PG-TO252-3
1:$1.1110
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ABRmicro #.ABR2045-IPD65R-1040255
ManufacturerInfineon Technologies
MPN #.IPD65R950CFDATMA2
Estimated Lead Time17 Weeks
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Datasheet
IPD65R950CFD(PDF)
IPD65R950CFD(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 1.1110
Ext. Price$ 1.1110
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.1110$1.1110
10$0.9110$9.1060
100$0.7090$70.8690
500$0.6000$300.1560
1000$0.4890$488.7500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ CFD2
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIPD65R950
Continuous Drain Current (ID) @ 25°C3.9A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)14.1 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)380 pF @ 100 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation36.7W (Tc)
RDS(on) Drain-to-Source On Resistance950mOhm @ 1.5A, 10V
Package Type (Mfr.)PG-TO252-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 200µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPD65R950CFDATMA2 is an N-channel power MOSFET manufactured by Infineon Technologies, featuring a high voltage rating of 650 V and a current rating of 3.9A at 25°C case temperature. It is housed in a surface-mount PG-TO252-3 package, designed for efficient power management in compact spaces. The device exhibits a low on-resistance of 950mOhm at a gate-to-source voltage of 10V and a drain current of 1.5A, ensuring effective conduction. It has an input capacitance of 380 pF at 100 V and a total gate charge of 14.1 nC at 10 V, indicating relatively fast switching performance. Overall, this component is suitable for high-density designs requiring reliable medium power handling capabilities.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.