IPD650P06NMATMA1P-Channel 60 V 22A (Tc) 83W (Tc) Surface Mount PG-TO252-3-313
1:$1.2650
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ABRmicro #.ABR2045-IPD650-945792
ManufacturerInfineon Technologies
MPN #.IPD650P06NMATMA1
Estimated Lead Time20 Weeks
SampleGet Free Sample
Datasheet
IPD650P06NM(PDF)
IPD650P06NM(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.2650
Ext. Price$ 1.2650
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.2650$1.2650
10$1.0330$10.3280
100$0.8030$80.3250
500$0.6800$340.0000
1000$0.5540$553.5630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIPD650
Continuous Drain Current (ID) @ 25°C22A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeP-Channel
Gate Charge Total (Qg)(Max.)39 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1600 pF @ 30 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation83W (Tc)
RDS(on) Drain-to-Source On Resistance65mOhm @ 22A, 10V
Package Type (Mfr.)PG-TO252-3-313
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 1.04mA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPD650P06NMATMA1 is a P-Channel MOSFET manufactured by Infineon Technologies. It is designed for surface mounting in a PG-TO252-3-313 package and is capable of handling a maximum voltage of 60 volts and a continuous drain current of 22 amps under specified conditions. The device offers a power dissipation capacity of 83 watts when mounted on a suitable thermal pad. It features a capacitance of 1600 pF at 30 volts and a total gate charge of 39 nC at 10 volts, making it suitable for efficient switching tasks.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.