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IPD60R600E6ATMA1N-Channel 600 V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO252-3
1:$0.5440
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IPD60R-938684
ManufacturerInfineon Technologies
MPN #.IPD60R600E6ATMA1
Estimated Lead Time-
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DatasheetIPx60R600E6(PDF)
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In Stock: 90
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 0.5440
Ext. Price$ 0.5440
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
2500$0.5440$1360.0000
5000$0.5170$2587.1880
12500$0.4940$6175.7810
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ E6
Packaging
Tape & Reel (TR)
Lifecycle StatusNRND(Not Recommended for New Designs)
Base Product NumberIPD60R
Continuous Drain Current (ID) @ 25°C7.3A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)20.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)440 pF @ 100 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Maximum Power Dissipation63W (Tc)
RDS(on) Drain-to-Source On Resistance600mOhm @ 2.4A, 10V
Package Type (Mfr.)PG-TO252-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 200µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
Customize Part Specifications , or Contact Our Sales Representative to Obtain the Data You Desireinfo@Abrmicro.com
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPD60R600E6ATMA1 is a N-Channel MOSFET manufactured by Infineon Technologies, designed for surface mount applications with its PG-TO252-3 package. It operates efficiently at a maximum drain-source voltage of 600V and can handle a continuous current of 7.3A with a power dissipation of 63W, both measured at the case temperature (Tc). The MOSFET features a gate charge of 20.5 nC at 10V, providing quick switching capabilities, and has a gate-source voltage rating of ±20V.
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