IPD60R600E6N-Channel 600 V 7.3A (Tc) 63W (Tc) Surface Mount PG-TO252-3
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ABRmicro #.ABR2045-IPD60R-927219
ManufacturerInfineon Technologies
MPN #.IPD60R600E6
Estimated Lead Time-
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Datasheet
IPx60R600E6(PDF)
IPx60R600E6(PDF)
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Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ E6
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolescence Review In Progress
Base Product NumberIPD60R
Continuous Drain Current (ID) @ 25°C7.3A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)20.5 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)440 pF @ 100 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation63W (Tc)
RDS(on) Drain-to-Source On Resistance600mOhm @ 2.4A, 10V
Package Type (Mfr.)PG-TO252-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 200µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPD60R600E6 is a power MOSFET manufactured by Infineon Technologies, featuring an N-Channel design capable of handling up to 600 volts and a continuous current of 7.3 amps at a case temperature (Tc). It efficiently dissipates power with a maximum capacity of 63 watts under similar conditions. This surface mount component is packaged in a PG-TO252-3, making it suitable for compact circuit designs. With a gate charge threshold of 3.5 volts at 200 microamps, the MOSFET exhibits a gate-source voltage rating of 10 volts. Additionally, it offers a low input capacitance of 440 picofarads at 100 volts, contributing to its high-speed switching capability.
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