IPD60R210CFD7ATMA1N-Channel 600 V 12A (Tc) 64W (Tc) Surface Mount TO-252AA (DPAK)
1:$1.9150
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ABRmicro #.ABR2045-IPD60R-972773
ManufacturerInfineon Technologies
MPN #.IPD60R210CFD7ATMA1
Estimated Lead Time20 Weeks
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Datasheet
IPD60R210CFD7(PDF)
IPD60R210CFD7(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.9150
Ext. Price$ 1.9150
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.9150$1.9150
10$1.5910$15.9060
100$1.2670$126.6500
500$1.0710$535.5000
1000$0.9100$909.5000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ CFD7
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIPD60R
Continuous Drain Current (ID) @ 25°C12A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)23 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1015 pF @ 400 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation64W (Tc)
RDS(on) Drain-to-Source On Resistance210mOhm @ 4.9A, 10V
Package Type (Mfr.)TO-252AA (DPAK)
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 240µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental Information
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPD60R210CFD7ATMA1 is an N-Channel MOSFET manufactured by Infineon Technologies, designed for high-efficiency power switching applications. It is capable of handling a maximum drain-source voltage of 600 V and can conduct a continuous current of up to 12 A, provided the case temperature is adequately maintained. With a power dissipation of 64W, this device is packaged in a TO-252AA (DPAK) surface-mount design, making it suitable for compact circuit board assemblies. The MOSFET features a low input capacitance of 1015 pF at 400 V and a gate-source voltage threshold that permits operation at 10V, optimizing its performance in terms of fast switching capabilities and robustness in high-voltage environments.
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