IPD60R1K5CEATMA1N-Channel 600 V 3.1A (Tc) 28W (Tc) Surface Mount PG-TO252-3
1:$0.5390
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ABRmicro #.ABR2045-IPD60R-956601
ManufacturerInfineon Technologies
MPN #.IPD60R1K5CEATMA1
Estimated Lead Time-
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Datasheet
IPD60R1K5CE, IPU60R1K5CE(PDF)
IPD60R1K5CE, IPU60R1K5CE(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.5390
Ext. Price$ 0.5390
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.5390$0.5390
10$0.4580$4.5790
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ CE
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolescence Review In Progress
Base Product NumberIPD60R
Continuous Drain Current (ID) @ 25°C3.1A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)9.4 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)200 pF @ 100 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-40°C ~ 150°C (TJ)
Maximum Power Dissipation28W (Tc)
RDS(on) Drain-to-Source On Resistance1.5Ohm @ 1.1A, 10V
Package Type (Mfr.)PG-TO252-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 90µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPD60R1K5CEATMA1 is a semiconductor component manufactured by Infineon Technologies, designed as an N-Channel MOSFET with a voltage rating of 600 V and a current handling capability of 3.1A at the case temperature (Tc). It features a power dissipation capacity of 28W, also at Tc. The device comes in a surface mount package, specifically a PG-TO252-3, which ensures compatibility with automated assembly processes. Key electrical characteristics include a threshold voltage requirement of 3.5V at a gate current of 90µA and a capacitance of 200 pF at 100 V. The transistor requires a gate-to-source voltage (Vgs) of 10V for full operation, making it suitable for a variety of electronics requiring efficient power handling.
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