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IPD50R380CEATMA1N-Channel 500 V 14.1A (Tc) 98W (Tc) Surface Mount PG-TO252-3

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ABRmicro #.ABR2045-IPD50R-1036738
MPN #.IPD50R380CEATMA1
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In Stock: 17
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Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesCoolMOS™ CE
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberIPD50R
Continuous Drain Current (ID) @ 25°C14.1A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))13V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)24.8 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)584 pF @ 100 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation98W (Tc)
RDS(on) Drain-to-Source On Resistance380mOhm @ 3.2A, 13V
Package Type (Mfr.)PG-TO252-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 260µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental & Export Classifications
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPD50R380CEATMA1 is a power MOSFET manufactured by Infineon Technologies, designed for high-efficiency switching applications. It features an N-channel configuration with a maximum drain-source voltage of 500V and a continuous drain current rating of 14.1A under specified conditions. Housed in a compact PG-TO252-3 surface mount package, this component offers a low on-resistance of 380 milli-ohms at 3.2A and 13V, making it suitable for minimizing conduction losses. Additionally, it has a total gate charge of 24.8 nanocoulombs typical at 10V, allowing efficient control of the switching performance. The MOSFET is capable of dissipating up to 98W of power, assuming optimal thermal management.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.