IPD50R1K4CEBTMA1N-Channel 500 V 3.1A (Tc) 25W (Tc) Surface Mount PG-TO252-3
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ABRmicro #.ABR2045-IPD50R-1019265
ManufacturerInfineon Technologies
MPN #.IPD50R1K4CEBTMA1
Estimated Lead Time-
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Datasheet
IPx50R1K4CE(PDF)
IPx50R1K4CE(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ CE
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberIPD50R
Continuous Drain Current (ID) @ 25°C3.1A (Tc)
Drain-to-Source Voltage (VDS)500 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))13V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)1 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)178 pF @ 100 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation25W (Tc)
RDS(on) Drain-to-Source On Resistance1.4Ohm @ 900mA, 13V
Package Type (Mfr.)PG-TO252-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 70µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPD50R1K4CEBTMA1 is a semiconductor component manufactured by Infineon Technologies. It is an N-channel MOSFET designed to handle a maximum voltage of 500 V and a current of 3.1 A under ideal thermal conditions. The component features a power dissipation capacity of 25 W and is encapsulated in a PG-TO252-3 surface mount package, suitable for compact electronic assemblies. With a gate charge of 1 nC at 10 V and a gate threshold voltage of 3.5 V at a 70 µA test condition, this MOSFET offers reliable performance with a maximum gate-source voltage tolerance of ±20 V.
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