IPD30N06S2L23ATMA3N-Channel 55 V 30A (Tc) 100W (Tc) Surface Mount PG-TO252-3-11
1:$0.7960
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ABRmicro #.ABR2045-IPD30N-977856
ManufacturerInfineon Technologies
MPN #.IPD30N06S2L23ATMA3
Estimated Lead Time12 Weeks
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Datasheet
IPD30N06S2L-23(PDF)
IPD30N06S2L-23(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 0.7960
Ext. Price$ 0.7960
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$0.7960$0.7960
10$0.6520$6.5240
100$0.5080$50.7880
500$0.4290$214.6250
1000$0.4250$425.0000
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIPD30N06
Continuous Drain Current (ID) @ 25°C30A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)42 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1091 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation100W (Tc)
RDS(on) Drain-to-Source On Resistance23mOhm @ 22A, 10V
Package Type (Mfr.)PG-TO252-3-11
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 50µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental Information
PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPD30N06S2L23ATMA3 is an N-Channel MOSFET manufactured by Infineon Technologies, designed to handle a maximum voltage of 55V and a continuous current of 30A under specified conditions. It features a low on-resistance of 23 milliohms at a current of 22A and a gate-to-source voltage of 10V. Encased in a surface-mount PG-TO252-3-11 package, it offers efficient thermal performance with a maximum power dissipation of 100W. The device has an input capacitance of 1091 pF at 25V and can tolerate gate-source voltages up to ±20V, making it suitable for high-power applications.
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