IPD25CN10NGBUMA1N-Channel 100 V 35A (Tc) 71W (Tc) Surface Mount PG-TO252-3
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ABRmicro #.ABR2045-IPD25C-980957
ManufacturerInfineon Technologies
MPN #.IPD25CN10NGBUMA1
Estimated Lead Time-
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Datasheet
IPx2xCN10N G(PDF)
IPx2xCN10N G(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberIPD25C
Continuous Drain Current (ID) @ 25°C35A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)31 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2070 pF @ 50 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation71W (Tc)
RDS(on) Drain-to-Source On Resistance25mOhm @ 35A, 10V
Package Type (Mfr.)PG-TO252-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 39µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental & Export Classifications
MSL Level3 (168 Hours, ≤ 30°C/60% RH), Vacuum Sealing
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPD25CN10NGBUMA1 is a N-Channel MOSFET manufactured by Infineon Technologies. It features a maximum drain-source voltage of 100 V and can handle a continuous drain current of up to 35A at optimal thermal conditions. The device is capable of dissipating up to 71W of power when mounted on a suitable heatsink. It comes in a surface mount PG-TO252-3 package, providing efficient thermal and electrical performance. The gate threshold voltage is 4V at a gate current of 39µA, and it supports a gate-source voltage limit of ±20V. This design provides reliable switching and amplification capabilities in various electronic applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.