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IPD20N03LN-Channel 30 V 30A (Tc) 60W (Tc) Surface Mount PG-TO252-3-11

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ABRmicro #.ABR2045-IPD20N-1002467
MPN #.IPD20N03L
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In Stock: 3
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberIPD20N
Continuous Drain Current (ID) @ 25°C30A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)11 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)700 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation60W (Tc)
RDS(on) Drain-to-Source On Resistance20mOhm @ 15A, 10V
Package Type (Mfr.)PG-TO252-3-11
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 25µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Environmental & Export Classifications
RoHS ComplianceNot RoHS compliant and cannot enter the EU market
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPD20N03L from Infineon Technologies is an N-channel MOSFET designed for surface mount applications, housed in a PG-TO252-3-11 package. It operates with a drain-source voltage of up to 30V and can handle a continuous current of 30A with a total power dissipation of 60W when mounted on a suitable heatsink. Characterized by a low gate charge of 11 nC at 5V and low on-resistance of 20mOhm at 15A and 10V, this MOSFET is capable of efficient switching performance. It is optimized for a threshold voltage of 4.5V and 10V, making it suitable for various electronic applications where compact and effective power management is required.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.