IPD144N06NGBTMA1N-Channel 60 V 50A (Tc) 136W (Tc) Surface Mount PG-TO252-3
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ABRmicro #.ABR2045-IPD144-979810
ManufacturerInfineon Technologies
MPN #.IPD144N06NGBTMA1
Estimated Lead Time-
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Datasheet
IPD144N06N G(PDF)
IPD144N06N G(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberIPD144N
Continuous Drain Current (ID) @ 25°C50A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)54 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1900 pF @ 30 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation136W (Tc)
RDS(on) Drain-to-Source On Resistance14.4mOhm @ 50A, 10V
Package Type (Mfr.)PG-TO252-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 80µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPD144N06NGBTMA1 from Infineon Technologies is a semiconductor component featuring an N-Channel MOSFET design, ideal for power switching applications. It is capable of handling a voltage up to 60V and a current of 50A at its case temperature (Tc). With a power dissipation of 136W at Tc, this part comes in a surface mount PG-TO252-3 package, making it suitable for compact designs. It includes a capacitance of 1900 pF at 30V, and the gate-source voltage is rated at ±20V, with a threshold voltage of 10V.
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