IPD12CN10NGATMA1N-Channel 100 V 67A (Tc) 125W (Tc) Surface Mount PG-TO252-3
1:$1.3770
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ABRmicro #.ABR2045-IPD12C-1036450
ManufacturerInfineon Technologies
MPN #.IPD12CN10NGATMA1
Estimated Lead Time18 Weeks
SampleGet Free Sample
Datasheet
IPx12CN10N G(PDF)
IPx12CN10N G(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
* Quantity
Unit Price$ 1.3770
Ext. Price$ 1.3770
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.3770$1.3770
10$1.1410$11.4110
100$0.9100$90.9500
500$0.7690$384.6250
1000$0.6520$652.3750
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIPD12CN10
Continuous Drain Current (ID) @ 25°C67A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)65 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)4320 pF @ 50 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation125W (Tc)
RDS(on) Drain-to-Source On Resistance12.4mOhm @ 67A, 10V
Package Type (Mfr.)PG-TO252-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 83µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental Information
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPD12CN10NGATMA1 is a surface-mount N-Channel MOSFET manufactured by Infineon Technologies, designed for efficient power management tasks. It operates with a maximum drain-source voltage of 100V and can handle up to 67A of current, with a power dissipation limit of 125W at the case temperature. The device features a low on-state resistance of 12.4mOhm when conducting 67A at a gate-source voltage of 10V, enhancing its performance in reducing power losses. It is enclosed in a PG-TO252-3 package and is resilient to gate-source voltages of up to ±20V, with a gate threshold voltage specified at 4V for an 83µA drain current.
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