IPD105N03LGATMA1N-Channel 30 V 35A (Tc) 38W (Tc) Surface Mount PG-TO252-3-11
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ABRmicro #.ABR2045-IPD105-1014937
ManufacturerInfineon Technologies
MPN #.IPD105N03LGATMA1
Estimated Lead Time-
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Datasheet
IP(D,F,S,U)105N03L G(PDF)
IP(D,F,S,U)105N03L G(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberIPD105N
Continuous Drain Current (ID) @ 25°C35A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)14 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1500 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation38W (Tc)
RDS(on) Drain-to-Source On Resistance10.5mOhm @ 30A, 10V
Package Type (Mfr.)PG-TO252-3-11
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 250µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPD105N03LGATMA1 is an N-Channel MOSFET produced by Infineon Technologies, offering a maximum voltage rating of 30 V and a continuous current rating of 35A when measured at the case (Tc). It is designed for surface-mount applications with its PG-TO252-3-11 packaging, providing a power dissipation capacity of up to 38W under optimal thermal conditions at the case (Tc). With an on-state resistance of 10.5 milliohms at 30A and 10V gate-to-source voltage, this MOSFET facilitates efficient power switching and minimized conduction losses. Its gate charge is rated at 14 nanocoulombs when driven by a 10V gate-source voltage, indicating rapid switching capabilities.
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