IPD082N10N3GATMA1N-Channel 100 V 80A (Tc) 125W (Tc) Surface Mount PG-TO252-3
1:$1.6160
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ABRmicro #.ABR2045-IPD082-930178
ManufacturerInfineon Technologies
MPN #.IPD082N10N3GATMA1
Estimated Lead Time18 Weeks
SampleGet Free Sample
Datasheet
IPx08xN10N3 G(PDF)
IPx08xN10N3 G(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 15, 2024
* Quantity
Unit Price$ 1.6160
Ext. Price$ 1.6160
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.6160$1.6160
10$1.3440$13.4410
100$1.0700$106.9940
500$0.9050$452.6250
1000$0.7690$769.2500
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIPD082
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)100 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)55 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3980 pF @ 50 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation125W (Tc)
RDS(on) Drain-to-Source On Resistance8.2mOhm @ 73A, 10V
Package Type (Mfr.)PG-TO252-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 75µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental Information
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPD082N10N3GATMA1 is a semiconductor device manufactured by Infineon Technologies, encapsulated as a surface-mount in the PG-TO252-3 package. This N-Channel MOSFET is designed to handle a drain-source voltage of up to 100 volts and can conduct a continuous current of 80 amperes under specified conditions. It features a power dissipation capability of 125 watts. The device exhibits an input capacitance of 3980 pF at 50 volts, and its gate-source voltage threshold is specified at ±20 volts, with operating gate voltages of 6V or 10V. This MOSFET is typically used in applications requiring efficient power management and control.
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