IPD06N03LB GN-Channel 30 V 50A (Tc) 83W (Tc) Surface Mount PG-TO252-3-11
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ABRmicro #.ABR2045-IPD06N-962695
ManufacturerInfineon Technologies
MPN #.IPD06N03LB G
Estimated Lead Time-
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Datasheet
IPD06N03LBG(PDF)
IPD06N03LBG(PDF)
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Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberIPD06N
Continuous Drain Current (ID) @ 25°C50A (Tc)
Drain-to-Source Voltage (VDS)30 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)22 nC @ 5 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2800 pF @ 15 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation83W (Tc)
RDS(on) Drain-to-Source On Resistance6.1mOhm @ 50A, 10V
Package Type (Mfr.)PG-TO252-3-11
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 40µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPD06N03LB G is an N-channel power MOSFET manufactured by Infineon Technologies. It is designed for surface mount applications, featuring a PG-TO252-3-11 package. This transistor can handle a maximum drain-source voltage of 30V and a drain current of up to 50A at a case temperature (Tc) of 25°C. The device exhibits an on-resistance of 6.1mOhms when conducting 50A with a gate-source voltage of 10V. The MOSFET is capable of dissipating up to 83W at a case temperature (Tc) of 25°C. Additionally, it has a gate threshold voltage of 2V at a drain current of 40µA and a total gate charge of 22 nanocoulombs at a gate-source voltage of 5V.
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