IPD053N06NATMA1N-Channel 60 V 18A (Ta), 45A (Tc) 3W (Ta), 83W (Tc) Surface Mount PG-TO252-3
1:$1.3080
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ABRmicro #.ABR2045-IPD053-996405
ManufacturerInfineon Technologies
MPN #.IPD053N06NATMA1
Estimated Lead Time20 Weeks
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Datasheet
IPD053N06N(PDF)
IPD053N06N(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.3080
Ext. Price$ 1.3080
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$1.3080$1.3080
10$1.0670$10.6680
100$0.8300$82.9810
500$0.7030$351.6880
1000$0.5730$572.6880
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIPD053
Continuous Drain Current (ID) @ 25°C18A (Ta), 45A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))6V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)27 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2000 pF @ 30 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation3W (Ta), 83W (Tc)
RDS(on) Drain-to-Source On Resistance5.3mOhm @ 45A, 10V
Package Type (Mfr.)PG-TO252-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.8V @ 36µA
Package / CaseTO-252-3, DPAK (2 Leads + Tab), SC-63
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Datasheets
Environmental Information
PCN Packaging
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPD053N06NATMA1 is an N-Channel MOSFET manufactured by Infineon Technologies, designed for surface mount applications with a PG-TO252-3 package. It operates with a 60 V maximum drain-source voltage and can handle a continuous current of 18A at ambient temperature (Ta) and 45A at case temperature (Tc). The power dissipation capacity is rated at 3W for ambient temperature and 83W for case temperature. The device features a gate-to-source voltage range of ±20V and exhibits a gate threshold voltage of 2.8V at 36µA, making it suitable for efficient power switching.
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