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IPC100N04S402ATMA1N-Channel 40 V 100A (Tc) 150W (Tc) Surface Mount PG-TDSON-8-23

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ABRmicro #.ABR2045-IPC100-1006462
MPN #.IPC100N04S402ATMA1
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In Stock: 17
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberIPC100N
Continuous Drain Current (ID) @ 25°C100A (Tc)
Drain-to-Source Voltage (VDS)40 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)105 nC @ 10 V
GradeAutomotive
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)8100 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation150W (Tc)
QualificationAEC-Q101
RDS(on) Drain-to-Source On Resistance2.4mOhm @ 50A, 10V
Package Type (Mfr.)PG-TDSON-8-23
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 80µA
Package / Case8-PowerTDFN
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Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPC100N04S402ATMA1 is a high-performance power transistor manufactured by Infineon Technologies, featuring an N-Channel MOSFET design. It is optimized for efficient power handling with a maximum voltage rating of 40V, and it can support up to 100A and 150W under appropriate conditions when mounted on a suitable surface. This component is encapsulated in a surface-mount PG-TDSON-8-23 package, which facilitates compact and reliable integration into circuit boards. Its low on-resistance of 2.4mOhm at 50A and 10V ensures minimal power loss, while its gate charge of 105 nC at 10 V indicates responsive switching performance. Furthermore, it has an input capacitance of 8100 pF at 25 V, which aligns with its design for efficient operation in power applications.
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