IPB80N06S3L-06N-Channel 55 V 80A (Tc) 136W (Tc) Surface Mount PG-TO263-3-2
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ABRmicro #.ABR2045-IPB80N-941191
ManufacturerInfineon Technologies
MPN #.IPB80N06S3L-06
Estimated Lead Time-
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Datasheet
IPB(I,P)80N06S3L-06(PDF)
IPB(I,P)80N06S3L-06(PDF)
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Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberIPB80N
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)196 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)9417 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation136W (Tc)
RDS(on) Drain-to-Source On Resistance5.6mOhm @ 56A, 10V
Package Type (Mfr.)PG-TO263-3-2
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±16V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2.2V @ 80µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPB80N06S3L-06 is an N-channel MOSFET manufactured by Infineon Technologies. It is designed for surface mount applications and packaged in a PG-TO263-3-2 format. This MOSFET supports a drain-source voltage of up to 55V and can handle a continuous current of 80A at a case temperature. It features a low on-resistance of 5.6 milliohms when measured at 56A and with a gate-source voltage of 10V, along with a total gate charge of 196 nC at a 10V gate-source voltage. The device can handle a maximum power dissipation of 136W and supports a gate-source voltage range of ±16V.
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