IPB80N06S3-07N-Channel 55 V 80A (Tc) 135W (Tc) Surface Mount PG-TO263-3-2
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ABRmicro #.ABR2045-IPB80N-907363
ManufacturerInfineon Technologies
MPN #.IPB80N06S3-07
Estimated Lead Time-
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Datasheet
IPB(I,P)80N06S3-07(PDF)
IPB(I,P)80N06S3-07(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 9, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberIPB80N
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)170 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)7768 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation135W (Tc)
RDS(on) Drain-to-Source On Resistance6.5mOhm @ 51A, 10V
Package Type (Mfr.)PG-TO263-3-2
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 80µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)