IPB80N06S2L11ATMA1N-Channel 55 V 80A (Tc) 158W (Tc) Surface Mount PG-TO263-3-2
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ABRmicro #.ABR2045-IPB80N-957294
ManufacturerInfineon Technologies
MPN #.IPB80N06S2L11ATMA1
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Datasheet
IPx80N06S2L-11(PDF)
IPx80N06S2L-11(PDF)
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Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolescence Review In Progress
Base Product NumberIPB80N
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)80 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)2075 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation158W (Tc)
RDS(on) Drain-to-Source On Resistance10.7mOhm @ 60A, 10V
Package Type (Mfr.)PG-TO263-3-2
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 93µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPB80N06S2L11ATMA1 is an N-channel MOSFET developed by Infineon Technologies, featuring a voltage rating of 55V and a current capacity of 80A when properly mounted for thermal dissipation. This component is designed for surface mounting and comes in a PG-TO263-3-2 package. It offers a maximum power dissipation of 158W under specified conditions and has a gate-to-source voltage tolerance of ±20V. The MOSFET exhibits an input capacitance of 2075 pF at 25V and has a threshold voltage of 2V at a gate current of 93µA, making it suitable for various applications within its specified ratings.
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