IPB80N06S2L07ATMA3N-Channel 55 V 80A (Tc) 210W (Tc) Surface Mount PG-TO263-3-2
1:$2.2990
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ABRmicro #.ABR2045-IPB80N-1005556
ManufacturerInfineon Technologies
MPN #.IPB80N06S2L07ATMA3
Estimated Lead Time12 Weeks
SampleGet Free Sample
Datasheet
IPx80N06S2L-07(PDF)
IPx80N06S2L-07(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 2.2990
Ext. Price$ 2.2990
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1$2.2990$2.2990
10$1.9310$19.3060
100$1.5630$156.2940
500$1.3890$694.3440
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusActive
Base Product NumberIPB80N
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)130 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3160 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation210W (Tc)
RDS(on) Drain-to-Source On Resistance6.7mOhm @ 60A, 10V
Package Type (Mfr.)PG-TO263-3-2
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 150µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental Information
PCN Assembly/Origin
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPB80N06S2L07ATMA3 is an N-Channel MOSFET produced by Infineon Technologies, designed for surface mounting in a PG-TO263-3-2 package. It is capable of handling a continuous drain current of 80A and a drain-source voltage of 55V, with a total power dissipation of 210W (Tc). This MOSFET features a substantial gate charge of 130 nC at 10 V and a capacitance of 3160 pF at 25 V, making it suitable for efficient switching tasks in electronic circuits.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.