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IPB80N06S2L06ATMA1N-Channel 55 V 80A (Tc) 250W (Tc) Surface Mount PG-TO263-3-2

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ABRmicro #.ABR2045-IPB80N-1025101
MPN #.IPB80N06S2L06ATMA1
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In Stock: 17
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 17, 2024
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Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolescence Review In Progress
Base Product NumberIPB80N
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))4.5V, 10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)150 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)3800 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation250W (Tc)
RDS(on) Drain-to-Source On Resistance6mOhm @ 69A, 10V
Package Type (Mfr.)PG-TO263-3-2
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)2V @ 180µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPB80N06S2L06ATMA1 is an N-Channel MOSFET manufactured by Infineon Technologies, featuring a drain-to-source voltage of 55V and a continuous drain current of 80A at Tc. It is designed for surface mounting and comes in a PG-TO263-3-2 package. The device exhibits a low on-state resistance of 6 milliohms at a drain current of 69A and a gate-source voltage of 10V, ensuring efficient operation with minimal power loss. Additionally, it supports a maximum total power dissipation of 250W (Tc) and can tolerate gate-source voltages up to ±20V, making it a robust component for various electronic applications.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.