IPB80N06S205ATMA1N-Channel 55 V 80A (Tc) 300W (Tc) Surface Mount PG-TO263-3-2
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ABRmicro #.ABR2045-IPB80N-930697
ManufacturerInfineon Technologies
MPN #.IPB80N06S205ATMA1
Estimated Lead Time-
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Datasheet
IPB,IPP80N06S2-05(PDF)
IPB,IPP80N06S2-05(PDF)
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Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberIPB80N
Continuous Drain Current (ID) @ 25°C80A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)170 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)5110 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation300W (Tc)
RDS(on) Drain-to-Source On Resistance4.8mOhm @ 80A, 10V
Package Type (Mfr.)PG-TO263-3-2
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 250µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPB80N06S205ATMA1 is an N-Channel MOSFET developed by Infineon Technologies, designed for surface mount applications with its PG-TO263-3-2 package configuration. This component is capable of handling a continuous current of 80A at a rated voltage of 55V, supporting power dissipation up to 300W under specified conditions. It features a low on-resistance of 4.8mOhm at 80A and 10V, which facilitates efficient current conduction. Additionally, the MOSFET has an input capacitance of 5110 pF at 25V, highlighting its capability for fast switching applications and efficient energy management.
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