IPB65R190CFDATMA1N-Channel 650 V 17.5A (Tc) 151W (Tc) Surface Mount PG-TO263-3
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ABRmicro #.ABR2045-IPB65R-977442
ManufacturerInfineon Technologies
MPN #.IPB65R190CFDATMA1
Estimated Lead Time-
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Datasheet
IPx65R190CFD(PDF)
IPx65R190CFD(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberIPB65R190
Continuous Drain Current (ID) @ 25°C17.5A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)68 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1850 pF @ 100 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation151W (Tc)
RDS(on) Drain-to-Source On Resistance190mOhm @ 7.3A, 10V
Package Type (Mfr.)PG-TO263-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4.5V @ 730µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPB65R190CFDATMA1 is an N-Channel MOSFET designed by Infineon Technologies. It operates at a voltage rating of 650 V and can handle a continuous current of 17.5A when properly mounted on a heatsink. With a power dissipation capability of 151W under specified conditions, it offers reliable performance in high-voltage switching applications. The device is housed in a PG-TO263-3 surface mount package, allowing for efficient thermal management and ease of integration into various electronic circuits. It features a gate-source voltage of ±20V and requires a gate drive voltage of 10V for optimal operation, ensuring effective control of the MOSFET's switching behavior.
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