IPB65R190C7ATMA1N-Channel 650 V 13A (Tc) 72W (Tc) Surface Mount PG-TO263-3
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ABRmicro #.ABR2045-IPB65R-982397
ManufacturerInfineon Technologies
MPN #.IPB65R190C7ATMA1
Estimated Lead Time-
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Datasheet
IPB65R190C6ATMA1 Datasheet(PDF)
IPB65R190C6ATMA1 Datasheet(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ C7
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolescence Review In Progress
Base Product NumberIPB65R
Continuous Drain Current (ID) @ 25°C13A (Tc)
Drain-to-Source Voltage (VDS)650 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)23 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1150 pF @ 400 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation72W (Tc)
RDS(on) Drain-to-Source On Resistance190mOhm @ 5.7A, 10V
Package Type (Mfr.)PG-TO263-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 290µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPB65R190C7ATMA1 is a N-Channel MOSFET manufactured by Infineon Technologies, featuring a drain-source voltage rating of 650V and a continuous current capacity of 13A at a case temperature (Tc). It provides a power dissipation capability of 72W, utilizing a surface mount PG-TO263-3 package design. The device exhibits a gate threshold voltage of 4V at 290µA, and operates efficiently with a typical gate voltage of 10V. Additionally, it has a capacitance of 1150 pF at 400 V, offering effective switching behavior crucial for its function within electronics environments.
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