IPB60R380C6ATMA1N-Channel 600 V 10.6A (Tc) 83W (Tc) Surface Mount PG-TO263-3
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ABRmicro #.ABR2045-IPB60R-996715
ManufacturerInfineon Technologies
MPN #.IPB60R380C6ATMA1
Estimated Lead Time-
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Datasheet
IPx60R380C6(PDF)
IPx60R380C6(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™ C6
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberIPB60R380
Continuous Drain Current (ID) @ 25°C10.6A (Tc)
Drain-to-Source Voltage (VDS)600 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)32 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)700 pF @ 100 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation83W (Tc)
RDS(on) Drain-to-Source On Resistance380mOhm @ 3.8A, 10V
Package Type (Mfr.)PG-TO263-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 320µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPB60R380C6ATMA1 is a power MOSFET from Infineon Technologies, designed for efficient power management in electronic devices. This component is an N-channel MOSFET with a voltage rating of 600 V and a current rating of 10.6 A when measured at the case temperature (Tc). It can dissipate up to 83 watts of power at Tc, indicating its capability to handle significant power loads. The device comes in a PG-TO263-3 surface mount package, making it suitable for compact and high-density board designs. Additionally, it features a gate-to-source voltage rating of ±20V and a gate charge of 32 nC at 10 V, which helps in optimizing switching performance.
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