IPB50R199CPATMA1N-Channel 550 V 17A (Tc) 139W (Tc) Surface Mount PG-TO263-3-2
1:$1.5020
Orders Over $2000 Receive a $100 Discount for Registered Abrmicro Users.
ABRmicro #.ABR2045-IPB50R-990062
ManufacturerInfineon Technologies
MPN #.IPB50R199CPATMA1
Estimated Lead Time15 Weeks
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Datasheet
IPB50R199CP(PDF)
IPB50R199CP(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
* Quantity
Unit Price$ 1.5020
Ext. Price$ 1.5020
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* Prices exclude tax, and all prices are in USD.
Price Gradients
Qty.Unit PriceExt. Price
1000$1.5020$1502.3750
2000$1.4150$2830.5000
5000$1.3570$6784.0630
* Prices are for reference only and are subject to change. Final sales prices will be confirmed at the time of purchase.
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesCoolMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusActive
Base Product NumberIPB50R199
Continuous Drain Current (ID) @ 25°C17A (Tc)
Drain-to-Source Voltage (VDS)550 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)45 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1800 pF @ 100 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
Maximum Power Dissipation139W (Tc)
RDS(on) Drain-to-Source On Resistance199mOhm @ 9.9A, 10V
Package Type (Mfr.)PG-TO263-3-2
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)3.5V @ 660µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Simulation Models
Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPB50R199CPATMA1 is an N-Channel MOSFET produced by Infineon Technologies, housed in a PG-TO263-3-2 surface mount package. It is designed to handle a maximum voltage of 550 V and a continuous current of 17A when properly mounted (Tc). The device can dissipate up to 139 watts of power under the same conditions. It has a maximum on-resistance of 199 milliohms when conducting 9.9A with a gate voltage of 10V. Additionally, the MOSFET has an input capacitance of 1800 pF at a voltage of 100 V. These characteristics make it suitable for high-voltage applications where efficient switching is required.
This information is sourced from the Internet, hasn't been reviewed, and may contain errors.