IPB260N06N3GATMA1N-Channel 60 V 27A (Tc) 36W (Tc) Surface Mount PG-TO263-3
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ABRmicro #.ABR2045-IPB260-1048136
ManufacturerInfineon Technologies
MPN #.IPB260N06N3GATMA1
Estimated Lead Time-
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Datasheet
IPB,IPP260N06N3 G(PDF)
IPB,IPP260N06N3 G(PDF)
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Packaging
Tape & Reel (TR)Cut Tape (CT)Abrmicro® Custom Packaging
Shipping DateNovember 17, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Cut Tape (CT)
Abrmicro® Custom Packaging
Lifecycle StatusObsolete
Base Product NumberIPB260N
Continuous Drain Current (ID) @ 25°C27A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)15 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1200 pF @ 30 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation36W (Tc)
RDS(on) Drain-to-Source On Resistance25.7mOhm @ 27A, 10V
Package Type (Mfr.)PG-TO263-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 11µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPB260N06N3GATMA1 is a surface-mount MOSFET manufactured by Infineon Technologies, featuring an N-Channel configuration. It operates at a maximum voltage of 60 V and can handle a continuous current of up to 27A at 25°C (Tc), with a power dissipation capacity of 36W. Housed in a PG-TO263-3 package, this MOSFET presents an on-state resistance of 25.7mOhm at a gate-source voltage of 10V and a drain current of 27A. Additionally, it has an input capacitance of 1200 pF when measured at 30 V.
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