IPB25N06S3-25N-Channel 55 V 25A (Tc) 48W (Tc) Surface Mount PG-TO263-3-2
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ABRmicro #.ABR2045-IPB25N-1006406
ManufacturerInfineon Technologies
MPN #.IPB25N06S3-25
Estimated Lead Time-
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Datasheet
IPB(I,P)25N06S3-25(PDF)
IPB(I,P)25N06S3-25(PDF)
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Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 16, 2024
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N-Channel 650 V 16A (Tc) 64W (Tc) Through Hole PG-TO251-3 Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolete
Base Product NumberIPB25N
Continuous Drain Current (ID) @ 25°C25A (Tc)
Drain-to-Source Voltage (VDS)55 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)41 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)1862 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation48W (Tc)
RDS(on) Drain-to-Source On Resistance24.8mOhm @ 15A, 10V
Package Type (Mfr.)PG-TO263-3-2
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 20µA
Package / CaseTO-263-3, D2PAK (2 Leads + Tab), TO-263AB
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Datasheets
Environmental & Export Classifications
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPB25N06S3-25 from Infineon Technologies is an N-Channel MOSFET designed for surface mounting in a PG-TO263-3-2 package. This component is capable of handling a voltage up to 55V and a continuous current of 25A at a specified temperature (Tc). With a power dissipation of 48W, it features a relatively low gate charge of 41 nC at 10V, making it efficient for switching applications. The part is engineered with a metal-oxide-semiconductor field-effect transistor structure, providing reliable performance in managing electrical loads.
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