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IPB180N06S4H1ATMA1N-Channel 60 V 180A (Tc) 250W (Tc) Surface Mount PG-TO263-7-3

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ABRmicro #.ABR2045-IPB180-925881
MPN #.IPB180N06S4H1ATMA1
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In Stock: 7
Shipped From Shenzhen or Hong Kong Warehouses
Min.&Mult.1
Packaging
Tape & Reel (TR)
Shipping DateNovember 15, 2024
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Technical Specifications
SeriesOptiMOS™
Packaging
Tape & Reel (TR)
Lifecycle StatusObsolescence Review In Progress
Base Product NumberIPB180
Continuous Drain Current (ID) @ 25°C180A (Tc)
Drain-to-Source Voltage (VDS)60 V
Drain-to-Source On Resistance (Max. Min.Rᴅs(on))10V
FET Feature-
FET TypeN-Channel
Gate Charge Total (Qg)(Max.)270 nC @ 10 V
Common Source Input Capacitance (Cɪss)(Max.)@(Vᴅs)21900 pF @ 25 V
MfrInfineon Technologies
Mounting StyleSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
Maximum Power Dissipation250W (Tc)
RDS(on) Drain-to-Source On Resistance1.7mOhm @ 100A, 10V
Package Type (Mfr.)PG-TO263-7-3
TechnologyMOSFET (Metal Oxide)
Gate-to-Source Voltage (Vɢs)±20V
VGS(th) Gate-to-Source Threshold Voltage (Max.)4V @ 200µA
Package / CaseTO-263-7, D2PAK (6 Leads + Tab)
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Environmental & Export Classifications
RoHS ComplianceComplies with RoHS 3 Directive (2015/863/EU)
MSL Level1 (Unlimited, ≤ 30°C/85% RH), No special packaging
REACH RegulationNo SVHCs Present
US ECCNEAR99
HTSUS8541.29.0095 (Other; No import duty applies)
Additional Details
The IPB180N06S4H1ATMA1 is a robust N-Channel MOSFET from Infineon Technologies, designed for surface mount applications with its PG-TO263-7-3 package. It operates with a drain-source voltage of 60V and can handle a continuous current of 180A under specified conditions, making it suitable for high-power applications. The MOSFET features an ultra-low on-resistance of 1.7mOhm at 100A and 10V, allowing for efficient current conduction. The device also shows a threshold voltage of 4V at 200µA and can withstand gate-source voltages up to ±20V, adding to its versatility and reliability in various electrical environments. The package has a thermal capacity of 250W, contributing to its effective thermal management in demanding operating conditions.
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